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negative ion beam

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  • Ion implantation — is a materials engineering process by which ions of a material can be implanted into another solid, thereby changing the physical properties of the solid. Ion implantation is used in semiconductor device fabrication and in metal finishing, as… …   Wikipedia

  • Ion source — An ion source is an electro magnetic device that is used to create charged particles. These are used primarily within mass spectrometers or particle accelerators.Mass spectrometry In mass spectrometry, an ion source is a piece of equipment used… …   Wikipedia

  • Ion — Cation and Anion redirect here. For the particle physics/quantum computing concept, see Anyon. For other uses, see Ion (disambiguation). Hydrogen atom (center) contains a single proton and a single electron. Removal of the electron gives a cation …   Wikipedia

  • Electrostatic ion thruster — The electrostatic ion thruster is a kind of design for ion thrusters (a kind of highly efficient low thrust spacecraft propulsion running on electrical power). These designs use high voltage electrodes in order to accelerate ions with… …   Wikipedia

  • Static secondary ion mass spectrometry — Static secondary ion mass spectrometry, or static SIMS is a technique for chemical analysis including elemental composition and chemical structure of the uppermost atomic or molecular layer of a solid which may be a metal, semiconductor or… …   Wikipedia

  • Electron Beam Ion Source — Eine Electron Beam Ion Trap (EBIT, Elektronenstrahl Ionenfalle) ist eine spezielle Art von Ionenfalle. Dieser Typ Falle eignet sich insbesondere für die Erzeugung und Speicherung hochgeladener Ionen. In ihr werden niedriggeladene Ionen… …   Deutsch Wikipedia

  • Electron Beam Ion Trap — Eine Electron Beam Ion Trap (EBIT) bzw. Elektronenstrahl Ionenfalle ist eine spezielle Art von Ionenfalle. Dieser Typ Falle eignet sich insbesondere für die Erzeugung und Speicherung hochgeladener Ionen. In ihr werden niedriggeladene Ionen… …   Deutsch Wikipedia

  • Electron beam ion trap — (or its acronym EBIT) is used in physics to denote an electromagnetic bottle that produces and confines highly charged ions. It was invented by R. Marrs [Levine et al, 1988] and M. Levine at LLNL.An EBIT uses an electron beam focused by means of… …   Wikipedia

  • Electron beam physical vapor deposition — or EBPVD is a form of physical vapor deposition in which a target anode is bombarded with an electron beam given off by a charged tungsten filament under high vacuum. The electron beam causes atoms from the target to transform into the gaseous… …   Wikipedia

  • Plasma-immersion ion implantation — (PIII) [cite book | title = Materials Science of Thin Films | author = Milton Ohring | publisher = Academic Press | year = 2002 | isbn = 0125249756 | url = http://books.google.com/books?id=SOt yFjV xwC pg=PA267… …   Wikipedia

  • Electron beam lithography — (often abbreviated as e beam lithography) is the practice of scanning a beam of electrons in a patterned fashion across a surface covered with a film (called the resist),cite book |last= McCord |first=M. A. |coauthors=M. J. Rooks |title=… …   Wikipedia

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